Op10hone datasheet 2n3904

Op10hone datasheet 2n3904

Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a ... 2N3904 Datasheet, 2N3904 PDF, 2N3904 Data sheet, 2N3904 manual, 2N3904 pdf, 2N3904, datenblatt, Electronics 2N3904, alldatasheet, free, datasheet, Datasheets, data ...

2N3904 fT 250 300 − − MHz Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo − 4.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − 8.0 pF Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903 2N3904 hie 1.0 1.0 8.0 10 k Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903 2N3904 hre 0.1 0.5 5.0 8.0 X 10−4 IRF530 MOSFET are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for IRF530 MOSFET.

cdn-shop.adafruit.com 2N3904 results. BJT: 2N3904 2N3904-T18 2N3904A 2N3904C 2N3904CSM 2N3904DCSM 2N3904E 2N3904G 2N3904N 2N3904S (Marking ZC ) 2N3904SC (Marking ZCC ) 2N3904U (Marking ZC ) 2N3904V H2N3904 MOSFET: IGBT: SCR: 2N3904 General Purpose Transistors NPN TO-92 Page 1 31/05/05 V1.0 High Speed Switching Features: • NPN Silicon Planar Switching Transistors. • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. NPN switching transistor 2N3904 DATA SHEET STATUS Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published.

DATA SHEET Product specification Supersedes data of 1999 Apr 23 2004 Oct 28 DISCRETE SEMICONDUCTORS 2N5550; 2N5551 NPN high-voltage transistors book, halfpage www.vishay.com The 2N3904 comes in a TO-92 case with leads in the order C,B,E. Some equivalent transistors have the opposite pinout (E,B,C) and some are B,C,E. This won't be a problem so long as you are aware of the difference, and refer to the datasheet of the part you are using when wiring up the circuit. 2N3391 Datasheet (PDF) 1.1. 2n3390 2n3391 2n3391a 2n3392 2n3393.pdf Size:296K _fairchild_semi. Discrete POWER & Signal Technologies 2N3390 2N3391 2N3391A 2N3392 2N3393 B TO-92 C E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA.

2N3904 Datasheet, 2N3904 PDF, 2N3904 Data sheet, 2N3904 manual, 2N3904 pdf, 2N3904, datenblatt, Electronics 2N3904, alldatasheet, free, datasheet, Datasheets, data ... Rev. C/CZ MMBT3904 SMD General Purpose Transistor (NPN) www.taitroncomponents.com Page 3 of 9 Fig.1- Delay and Rise Time Fig.2- Storage and Fall Time 2N3904 fT 250 300 − − MHz Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo − 4.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − 8.0 pF Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903 2N3904 hie 1.0 1.0 8.0 10 k Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903 2N3904 hre 0.1 0.5 5.0 8.0 X 10−4 Pzt3904 pdf This device is designed as a general purpose. Last Update: Apr 2015 PDF SOT223-4L, PACKING DRAWING2N3904 MMBT3904 PZT3904 Rev. pzt3904 spice model Stresses exceeding the absolute maximum ratings may damage the device.PZT3904 datasheet, PZT3904 pdf, PZT3904 data sheet, datasheet,

2N3904 / MMBT3904 / PZT3904 2N3904 MMBT3904 PZT3904 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. Absolute Maximum Ratings* TA = 25°C unless otherwise noted 2N6004 Datasheet (PDF) 5.1. l2n600.pdf Size:395K _lrc LESHAN RADIO COMPANY, LTD. 600V N-Channel Enhancement-Mode MOSFET VDS= 600V RDS(ON), [email protected], [email protected] = 3.8Ω We declare that the material of product compliance with RoHS requirements. NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings* T A = 25°C unless otherwise noted

DATA SHEET Product specification Supersedes data of 1999 Apr 23 2004 Oct 28 DISCRETE SEMICONDUCTORS 2N5550; 2N5551 NPN high-voltage transistors book, halfpage 2N3904 ELECTRICAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL MIN. MAX. UNIT Small Signal Current Gain at VCE = 10 V, IC = 1 mA, f = 1 kHz hfe 100 400 — Output Admittance at VCE = 1 V, IC = 1 mA, f = 1 kHz hoe 140mS Noise Figure at VCE = 5 V, IC = 100 mA, RG = 1 kW, f = 10 É 15000 Hz NF — 5 dB Delay Time (see Fig. 1)

2N3904 Datasheet (PDF) 1.1. 2n3904g.pdf Size:398K _upd SEMICONDUCTOR 2N3904 TECHNICAL DATA FEATURE NPN silicon epitaxial planar transistor for switching and TO-92 Amplifier applications As complementary type, the PNP transistor 2N3906 is Recommended 1. EMITTER 2. BASE 3. The 2N3904 is a common NPN bipolar junction transistor used for general-purpose low-power amplifying or switching applications. It is designed for low current and power, medium voltage, and can operate at moderately high speeds.

2N3904 Datasheet (PDF) 1.1. 2n3904g.pdf Size:398K _upd SEMICONDUCTOR 2N3904 TECHNICAL DATA FEATURE NPN silicon epitaxial planar transistor for switching and TO-92 Amplifier applications As complementary type, the PNP transistor 2N3906 is Recommended 1. EMITTER 2. BASE 3.

2N3904 Signal Transistor. Catalog №: 2762016. $2.00 Sold-out Online. Request notification Find a store. Tweet. Maximum Power Dissipation: 350 mW. Maximum Collector ...

IRF530 MOSFET are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for IRF530 MOSFET. Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a ... New 100 X 2N3904 PNP General Purpose Transistor TO-92 $4.99 Bridgold 10pcs MJE3055T MJE3055 NPN Bipolar (BJT) Single Transistor,10 A/60V,is Designed for General Purpose of Amplifier andswitching Applications

2N3904 Absolute maximum ratings Ta=25 °C Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 60 V Collector-Emitter voltage VCEO 40 V Emitter-base voltage VEBO 6V Collector current IC 200 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature range Tstg-55~150 °C IRF530 MOSFET are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for IRF530 MOSFET. 2N3904 General Purpose Transistors NPN TO-92 Page 1 31/05/05 V1.0 High Speed Switching Features: • NPN Silicon Planar Switching Transistors. • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. 2N3904 Absolute maximum ratings Ta=25 °C Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 60 V Collector-Emitter voltage VCEO 40 V Emitter-base voltage VEBO 6V Collector current IC 200 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature range Tstg-55~150 °C