53a50 datasheets

53a50 datasheets

UNISONIC TECHNOLOGIES CO., LTD 5N90 Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 5 of 7 www.unisonic.com.tw QW-R502-499.H TEST CIRCUITS AND WAVEFORMS VDS DUT RG dv/dt controlled by RG

FQP50N06 60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the TO252-4L datasheet, cross reference, circuit and application notes in pdf format. A50L-0001-0329 MITSUBISHI ELECTRIC If you look for a product that is: tested and reliable, affordable, compatible, with 24 month warranty; choose from our second-hand product offer!

IXFB100N50P MOSFET N-CH 500V 100A PLUS264 IXYS datasheet pdf data sheet FREE from datasheetz.com Datasheet (data sheet) search for integrated circuits (ic), semiconductors and other electronic components such as resistors, capacitors, transistors and diodes.

RF Power Field Effect Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output

2N5088, 2N5089 Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage 2N5088 2N5089 VCEO 30 25 Vdc Collector − Base Voltage 2N5088 2N5089 VCBO 35 30 Vdc Emitter − Base Voltage VEBO 3.0 Vdc Collector Current − Continuous IC 50 mAdc Total Device Dissipation @ TA = 25°C RCE(on) typ. = equivalent on-resistance = VCE(on) typ./ IC, where VCE(on) typ.= 2.00V and IC =33A. ID (FET Equivalent) is the equivalent MOSFET ID rating @ 25°C for applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions. 18N50 Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 7 of 8 www.unisonic.com.tw QW-R502-477.S TYPICAL CHARACTERISTICS D r a i n C u r r e n t, I D (A) Drain-Source Voltage, V DS (V) Gate Charge Characteristics IXFB100N50P MOSFET N-CH 500V 100A PLUS264 IXYS datasheet pdf data sheet FREE from datasheetz.com Datasheet (data sheet) search for integrated circuits (ic), semiconductors and other electronic components such as resistors, capacitors, transistors and diodes. data sheets This web site was designed to be best viewed on any P.C., a SmartPhone or a Tablet An excellent variety of free DATA SHEETS on various semiconductor components

9N50C datasheet, 9N50C pdf, 9N50C data sheet, datasheet, data sheet, pdf FQP13N50/FQPF13N50 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching RCE(on) typ. = equivalent on-resistance = VCE(on) typ./ IC, where VCE(on) typ.= 2.00V and IC =33A. ID (FET Equivalent) is the equivalent MOSFET ID rating @ 25°C for applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.

data sheets This web site was designed to be best viewed on any P.C., a SmartPhone or a Tablet An excellent variety of free DATA SHEETS on various semiconductor components 9N50C datasheet, 9N50C pdf, 9N50C data sheet, datasheet, data sheet, pdf ZTX651 Datasheet (PDF) 1.1. ztx650 ztx651.pdf Size:67K _diodes. NPN SILICON PLANAR ZTX650 MEDIUM POWER TRANSISTORS ZTX651 ISSUE 2 JULY 94 T V I V i i I V V E-Line V V TO92 Compatible ABSOLUTE MAXIMUM RATINGS.

ste53na50 n - channel enhancement mode fast power mos transistor type st e53na50 s s s s v dss 500 v r ds(on) . 0.085 Ω id 53 a s s s s s typical rds(on) = 0.075 Ω high current power module avalanche rugged technology very large soa - large peak power capability easy to mount same current capability for the two source terminals extremely low rth

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Title: GU50 Author: Electronintorg Subject: JA-2003-01-18 Created Date: 12/13/2002 5:28:06 PM

UNI5737 datasheet, cross reference, circuit and application notes in pdf format. UNI5737 datasheet & applicatoin notes - Datasheet Archive The Datasheet Archive Preliminary data sheet. IXYS reserves the right to change limits, test conditions, and dimensions. Title: 50C5 Author: RCA Subject: FP-2012-01-14 Created Date: 1/14/2012 2:24:32 PM

UNI5737 datasheet, cross reference, circuit and application notes in pdf format. UNI5737 datasheet & applicatoin notes - Datasheet Archive The Datasheet Archive 74A50 datasheet, 74A50 pdf, 74A50 data sheet, datasheet, data sheet, pdf 4 www.irf.com Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 1 10 100 1000 VDS, Drain-to-Source Voltage (V) 10 100 1000 10000 100000 C, C a p a c i t a n Data sheet erratum PCN 2009-134-A. New package outlines TO-247. Final Data Sheet Erratum Rev. 2.4, 2014-04-29. 1. New package outlines TO-247. Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package