Datasheet ca3046 bjt arrayan

Datasheet ca3046 bjt arrayan

.model CA3046 NPN + (IS = 10.0E - 15 XTI= 3.000E + 00 EG = 1.110E + 00 VAF = 1.00E + 02 + VAR = 1.000E + 02 BF = 145.7E + 00 ISE = 114.286E - 15 NE = 1.480E + 00 Dec 05, 2013 · Figure 1 LM3046/CA3046 NPN BJT ARRAY. PRELAB FOR THE EMITTER-COUPLED PAIR. Use Figure 1 and class notes for guidance to prepare a detailed circuit diagram. Include pinouts for the LM3046/CA3046 npn array. From your circuit diagram and circuit specifications, calculate the expected important Q-point values, and A dm, A cm, and the CMRR in dB. El propósito de este artículo será explicar el funcionamiento del transistor BJT como un elemento semiconductor destacando sus características y posibles usos en circuitos electrónicos, además de conocer un poco sobre la historia del mismo y su trascendencia en la actualidad.

Dec 05, 2013 · Figure 1 LM3046/CA3046 NPN BJT ARRAY. PRELAB FOR THE EMITTER-COUPLED PAIR. Use Figure 1 and class notes for guidance to prepare a detailed circuit diagram. Include pinouts for the LM3046/CA3046 npn array. From your circuit diagram and circuit specifications, calculate the expected important Q-point values, and A dm, A cm, and the CMRR in dB. The collector of each transistor of the CA3045 and CA3046 is isolated from the substrate by an integral diode. The substrate (Terminal 13) must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor ac- CA3046 Bipolar Transistors - BJT are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for CA3046 Bipolar Transistors - BJT. Order today, ships today. CA3083 – Bipolar (BJT) Transistor Array 5 NPN 15V 100mA 450MHz 500mW Through Hole 16-PDIP from Renesas Electronics America Inc.. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

The typical base-emitter gain (beta or hFE) of a CA3046 is 100, at an emitter current of 100ma. This translates to a base-collector gain (alpha) of 0.99. The collector of each transistor of the CA3045 and CA3046 is isolated from the substrate by an integral diode. The substrate (Terminal 13) must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor ac- G'day. Thanks for helping but that wasn't quite the answer I was after nor that was the question I was actually asking. That particular transistor I am aware is already in the models list in standard.bjt and I actually cut and pasted the given code for that 2N3393 transistor from standard.bjt as an example showing what kind of mumbo jumbo coded parameters LTspice uses to specify transistor ...

Welcome to the ECE4902 Analog IC design web page. ... MOS - BJT Comparison: ... CA3046 NPN Transistor Array Data Sheet. BF200 Transistor Datasheet pdf, BF200 Equivalent. Parameters and Characteristics

CA3046, CA3086, CA3127 Transistor Array SPICE Models TM Application Note tle 97 30 08 12 anr y E - June 1997 MM9701 Introduction Model Performance This application note describes the SPICE transistor models for the bipolar devices that comprise the CA3046, CA3086, and the CA3127 High Frequency NPN Transistor Arrays.

Manufacturer: Intersil Manufacturer Part No: CA3046 RoHS: Yes Datasheet: Click Here Specifications Transistor Polarity: NPN Collector- Emitter Voltage VCEO Max: 15 V Dec 05, 2013 · Figure 1 LM3046/CA3046 NPN BJT ARRAY. PRELAB FOR THE EMITTER-COUPLED PAIR. Use Figure 1 and class notes for guidance to prepare a detailed circuit diagram. Include pinouts for the LM3046/CA3046 npn array. From your circuit diagram and circuit specifications, calculate the expected important Q-point values, and A dm, A cm, and the CMRR in dB.

DATASHEET The CA3140A and CA3140 are integrated circuit operational amplifiers that combine the advantages of high voltage PMOS transistors with high voltage bipolar transistors on a single monolithic chip. The CA3140A and CA3140 BiMOS operational amplifiers feature gate protected MOSFET (PMOS) transistors in the .model CA3046 NPN + (IS = 10.0E - 15 XTI= 3.000E + 00 EG = 1.110E + 00 VAF = 1.00E + 02 + VAR = 1.000E + 02 BF = 145.7E + 00 ISE = 114.286E - 15 NE = 1.480E + 00 G'day. Thanks for helping but that wasn't quite the answer I was after nor that was the question I was actually asking. That particular transistor I am aware is already in the models list in standard.bjt and I actually cut and pasted the given code for that 2N3393 transistor from standard.bjt as an example showing what kind of mumbo jumbo coded parameters LTspice uses to specify transistor ... Semiconductor Electronic Components CA3046 BJT (Bipolar Junction Transistor) DATASHEET The CA3140A and CA3140 are integrated circuit operational amplifiers that combine the advantages of high voltage PMOS transistors with high voltage bipolar transistors on a single monolithic chip. The CA3140A and CA3140 BiMOS operational amplifiers feature gate protected MOSFET (PMOS) transistors in the

Dec 05, 2013 · Figure 1 LM3046/CA3046 NPN BJT ARRAY. PRELAB FOR THE EMITTER-COUPLED PAIR. Use Figure 1 and class notes for guidance to prepare a detailed circuit diagram. Include pinouts for the LM3046/CA3046 npn array. From your circuit diagram and circuit specifications, calculate the expected important Q-point values, and A dm, A cm, and the CMRR in dB. .model CA3046 NPN + (IS = 10.0E - 15 XTI= 3.000E + 00 EG = 1.110E + 00 VAF = 1.00E + 02 + VAR = 1.000E + 02 BF = 145.7E + 00 ISE = 114.286E - 15 NE = 1.480E + 00

CA3046 Bipolar Transistors - BJT are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for CA3046 Bipolar Transistors - BJT. Request National Semiconductor LM3046N: IC TRANSISTOR ARRAY 14-DIP online from Elcodis, view and download LM3046N pdf datasheet, Transistors (BJT) - Arrays specifications.

Buy CA3046 INTERSI/ST/HARRIS DIP-14, Learn more about CA3046 ipolar Transistors - BJT TRANS ARRAY, View the manufacturer, and stock, and datasheet pdf for the CA3046 at Jotrin Electronics.

Request National Semiconductor LM3046N: IC TRANSISTOR ARRAY 14-DIP online from Elcodis, view and download LM3046N pdf datasheet, Transistors (BJT) - Arrays specifications.

El propósito de este artículo será explicar el funcionamiento del transistor BJT como un elemento semiconductor destacando sus características y posibles usos en circuitos electrónicos, además de conocer un poco sobre la historia del mismo y su trascendencia en la actualidad. G'day. Thanks for helping but that wasn't quite the answer I was after nor that was the question I was actually asking. That particular transistor I am aware is already in the models list in standard.bjt and I actually cut and pasted the given code for that 2N3393 transistor from standard.bjt as an example showing what kind of mumbo jumbo coded parameters LTspice uses to specify transistor ... Lab2_SP15 - , 1 Lab 2 The BJT Differential Pair Report due two weeks from date assigned Objectives The primary objective of this experiment is to